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敢不敢帮我翻译一下。敢不敢帮我翻译下。敢不敢帮翻译一下。

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for the common emitter configuration,the physics is the same but the I-V characteristics look different because Ic is plotted versus Vce with the varying parameter Ib,If forward biasing the base-emitter junction,electrons will be injected from the emitter into the base and hole from the base into the emitter.The injected holes recombine in the emitter or at the emitter contact and flow out the common emiter contact,but a small fraction of the electrons injiected into the base will recombine and flow out the base contact.Most of the elections diffuse across the thin base to be collected by    the collector.


1楼2010-06-03 00:11回复
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    共同的发射器结构、物理是相同的,但电流-电压特性曲线看上去不同因为Ic卡和不同参数对Vce盈,如果分析的基础上,提出了base-emitter偏置,电子将被注入到基地和洞排放从基地进入发射器在注入洞重组或排放的排放与流出的共同emiter接触,但是一小部份的电子injiected进入基地将重组和流出基地联络大部分的选举,弥漫在薄的基地在收集器。


    2楼2010-06-03 00:14
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      果然。。。有道百度谷歌。。。。。真是翻译的七上八下啊。。。郁闷了。。


      4楼2010-06-03 00:18
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